Neon matrix ESR investigation of 69,71GaAs+ generated by the photoionization of laser vaporized GaAs(s)
Knight, L. B.; Petty, J. T. Neon matrix ESR investigation of 69,71GaAs+ generated by the photoionization of laser vaporized GaAs(s). J. Chem. Phys. 1988, 88, 481-481.
The first spectroscopic results are reported for the 6 9 , 7 1GaAs+ cation radical generated by photoionizing GaAs (g) produced by the pulsed laservaporization of GaAs (s). The GaAs+ cation was trapped in neon matrices at 4 K for ESR investigations which show the ground electronic state to be 4Î£âˆ’ in agreement with previously reported theoretical calculations. Components of the galliumAtensors are 6 9Ga; A âŠ¥=184.2(2), A âˆ¥=270 (30) MHz, and for 7 1Ga A âŠ¥=234.4(2), A âˆ¥=345(35) MHz. The unresolved As hfs was estimated to be less than 8 MHz for the perpendicular direction and the molecular g âŠ¥ value as 1.9978(2) with g âˆ¥ presumablyâˆ¼2.00. These nuclear hyperfine parameters are used to obtain a description of the valence electronic structure for GaAs+ which can be compared with recent MCSCF/CI theoretical results.
Journal of Chemical Physics