Laser vaporization generation of 69Ga31P+ and 71Ga31P+ for neon matrix electron spin resonance studies: Electronic structure comparison with GaAs+
Knight, L. B.; Herlong, J. O. Laser vaporization generation of 69Ga31P+ and 71Ga31P+ for neon matrix electron spin resonance studies: Electronic structure comparison with GaAs+. J. Chem. Phys. 1989, 91, 69-69.
The 6 9GaP+ and 7 1GaP+ molecular ions have been generated by the combined methods of photoionization/laser vaporization for trapping in neon matrices at 4 K for electron spin resonance(ESR) investigation. The ground electronic state of GaP+ has been determined as X-€‰ 4-ˆ‘ and its electronic structure based on nuclear hyperfineproperties is compared with the isovalent ion, GaAs+. The magnetic parameters (MHz) for Ga3 1P+ are: g -Š¥ =1.9836(5); A -Š¥ (6 9Ga)=188.6(1); A -Š¥ (7 1Ga)=239.4(1); A -ˆ¥ (6 9Ga)=260(30); A -ˆ¥ (7 1Ga)=300(10); A -Š¥ (3 1P)=108.0(1); and A -ˆ¥ (3 1P)-‰Š200(150). The g and A values observed for 3 1P(4 S 1/2) atoms in these neon matrices show closer agreement with the gas phase parameters compared to previous values reported for the heavier rare gases.
Journal of Chemical Physics