Laser vaporization generation of 69Ga31P+ and 71Ga31P+ for neon matrix electron spin resonance studies: Electronic structure comparison with GaAs+
ACS Citation
Knight, L. B.; Herlong, J. O. Laser vaporization generation of 69Ga31P+ and 71Ga31P+ for neon matrix electron spin resonance studies: Electronic structure comparison with GaAs+. J. Chem. Phys. 1989, 91, 69-69.
Version of Record
Abstract
The 6 9GaP+ and 7 1GaP+ molecular ions have been generated by the combined methods of photoionization/laser vaporization for trapping in neon matrices at 4 K for electron spin resonance(ESR) investigation. The ground electronic state of GaP+ has been determined as X-€‰ 4-ˆ‘ and its electronic structure based on nuclear hyperfineproperties is compared with the isovalent ion, GaAs+. The magnetic parameters (MHz) for Ga3 1P+ are: g -Š¥ =1.9836(5); A -Š¥ (6 9Ga)=188.6(1); A -Š¥ (7 1Ga)=239.4(1); A -ˆ¥ (6 9Ga)=260(30); A -ˆ¥ (7 1Ga)=300(10); A -Š¥ (3 1P)=108.0(1); and A -ˆ¥ (3 1P)-‰Š200(150). The g and A values observed for 3 1P(4 S 1/2) atoms in these neon matrices show closer agreement with the gas phase parameters compared to previous values reported for the heavier rare gases.
Source Name
Journal of Chemical Physics
Publication Date
1-1-1989
Volume
91
Issue
1
Page(s)
1152-1152
Document Type
Citation
Citation Type
Article