Utilizing self-assembled multilayers in lithographic processing for nanostructure fabrication: Initial evaluation of the electrical integrity of nanogaps
ACS Citation
Anderson, M.E.; Srinivasan, C.; Jayaraman, R.; Weiss, P.S.; Horn, M.W. Utilizing Self-Assembled Multilayers in Lithographic Processing for Nanostructure Fabrication: Initial Evaluation of the Electrical Integrity of the Nanogaps. Microelectron. Eng.2005,78-79, 248-252.
Version of Record
Abstract
We apply self-assembly to form multilayers on gold structures formed by lithographic techniques to create patterns with spacings in the 10-100 nm regime. Controlled placement and thickness of these multilayers form “molecular ruler” resists to tailor spacings accurately between lithographically defined structures. We report on recent results both in designing and patterning complex nanostructures by combining photolithography and molecular rulers. After exposure, development, metal deposition, and lift-off of both the photoresist and molecular resist, the final product has secondary structures and gaps selectively oriented to create hierarchical nanostructures. The electrical integrity of the nanogaps formed using this process is evaluated for a variety of multilayer thicknesses and electrodes widths.
Source Name
Microelectronic Engineering
Publication Date
3-1-2005
Volume
78-79
Page(s)
248-252
Document Type
Citation
Citation Type
Article